r07ds1379ej0004 rev.0.04 page 1 of 4 dec 28, 2016 preliminary data sheet RBN40H65T1FPQ-A0 650v - 40a - igbt application: uninterruptible power supply features ? low collector to emitter saturation voltage v ce(sat) = 1.5 v typ. (at i c = 40 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode in one package ? trench gate and thin wafer technology (g8h series) ? high speed switching ? not guarantee short circuit withstand time outline absolute maximum ratings (tc = 25 c ) item symbol ratings unit collector to emitter voltage v ces / v r 650 v gate to emitter voltage v ges ? 30 v collector current tc = 25 c i c 80 a tc = 100 c i c 40 a collector peak current i c (peak) note1 (160) a collector to e mitter diode forward current tc = 25 c i df 60 a tc = 100 c i df 30 a collector to emitter diode forward peak current i df (peak) note1 (160) a collector dissipation p c note 2 (220) w junction to case thermal impedance (igbt) ? j-c (0.68) c/w junction to case thermal resistance (diode) ? j-cd (0.94) c/ w junction temperature tj note2 175 c storage temperature tstg C55 to +150 c note: continuous heavy condition (e.g. high temperature/voltage /current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratin gs. please consider deratin g condition for appropriate reliability in reference renesas semiconductor reliability han dbook (recommendation for handling and usage of semiconductor devices) and i ndividual reliability data. 1. gate 2. collecto r 3. emitter 4. collecto r c g e 1 2 3 4 renesas package code: prss0003zh-a (package name: to-247a) r07ds1379ej0004 rev.0.04 dec 28, 2016
RBN40H65T1FPQ-A0 preliminary r07ds1379ej0004 rev.0.04 page 2 of 4 dec 28, 2016 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current / diode reverse current i ces / i r ? ? (200) ? a v ce = 650 v, v ge = 0 gate to emitter leak current i ges ? ? (1) ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) (4.1) ? (5.9) v v ce = 10v, i c = 0.8 ma collector to emi tter saturation voltage v ce(sat) ? (1.5) (2.0) v i c = 40 a, v ge = 15v note3 input capacitance cies (940) pf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes (130) pf reverse transfer capacitance cres (10) pf total gate charge qg (36) nc vge = 15 v vce = 400 v ic = 40 a gate to emitter charge qge (8) nc gate to collector charge qgc (17) nc turn-on delay time t d(on) ? (22) ? ns v cc = 400 v v ge = 15 v/-5v i c = 40 a rg = 16 ?? t c = 25 ? c inductive load note4 rise time t r (19) ns turn-off delay time t d(off) (96) ns fall time t f (45) ns turn-on loss energy e on (0.62) mj turn-off loss energy e off (0.52) mj total switching energy e total (1.14) mj turn-on delay time t d(on) ? (21) ? ns v cc = 400 v v ge = 15 v/-5v i c = 40 a rg = 16 ?? t c = 150 ? c inductive load note4 rise time t r (20) ns turn-off delay time t d(off) (120) ns fall time t f (60) ns turn-on loss energy e on (0.98) mj turn-off loss energy e off (0.88) mj total switching energy e total (1.86) mj frd forward voltage v f (1.7) (2.2) v i f = 30 a note3 frd reverse recovery time t rr (55) ns i f = 30 a, di f /dt = 300 a/ ? s frd reverse recovery charge q rr (0.21) c frd peak reverse recovery current i rr (7) a notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. please use this device in t he thermal conditions which th e junction temperature do es not exceed 175c. renesas igbt application note i s disclosed abou t reliability te st and application condition up to 175c. 3. pulse test 4. switching time test circuit and waveform are shown below.
RBN40H65T1FPQ-A0 preliminary r07ds1379ej0004 rev.0.04 page 3 of 4 dec 28, 2016 switching time test circuit diode reverse recovery time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg 0.5 i rr l 0 t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c
RBN40H65T1FPQ-A0 preliminary r07ds1379ej0004 rev.0.04 page 4 of 4 dec 28, 2016 package dimensions ordering information orderable part number quantity shipping container RBN40H65T1FPQ-A0#cb0 240 pcs box (tube) 15.94 0.19 5.45 6.15 21.13 0.33 20.19 0.38 4.5 max ? 3.60 0.1 1.27 0.13 5.45 2.41 0.71 0.1 5.02 0.19 unit: mm 6.14g mass[typ.] prss0003zh-a renesas code jeita package code previous code package name to-247a 17.63 13.26 2.10 + 0.1 C 0.2
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